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A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications., , , , , и . IRPS, стр. 1-4. IEEE, (2020)Self-heating characterization and its applications in technology development., , , , , , , , , и 8 other автор(ы). NATW, стр. 1-7. IEEE, (2020)RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications., , , , , , , , , и 3 other автор(ы). IRPS, стр. 1-6. IEEE, (2021)Non-homogeneous space mechanical strain induces asymmetrical magneto-tunneling conductance in MOSFETs., , , и . ESSDERC, стр. 90-93. IEEE, (2014)Large Signal RF Reliability of 45-nm RFSOI Power Amplifier Cell for Wi-Fi6 Applications., , , и . IRPS, стр. 1-6. IEEE, (2021)Cap layer and multi-work-function tuning impact on TDDB/BTI in SOI FinFET devices., , , и . IRPS, стр. 2. IEEE, (2018)Self-heating and its implications on hot carrier reliability evaluations., и . IRPS, стр. 4. IEEE, (2015)Reliability of SPST Series-stacked SOI CMOS RF Switches for mmWave Applications., , , , и . IRPS, стр. 1-6. IEEE, (2023)Parasitic Drain Series Resistance Effects on Non-conducting Hot Carrier Reliability., , , , , , , и . IRPS, стр. 5. IEEE, (2022)6G Roadmap for Semiconductor Technologies: Challenges and Advances., , и . IRPS, стр. 11. IEEE, (2022)