Author of the publication

Detection of localized UIS failure on IGBTs with the aid of lock-in thermography.

, , , , , , , and . Microelectron. Reliab., 48 (8-9): 1432-1434 (2008)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

A new test structure for recombination measurements in thin si layers for VLSI structures., and . Eur. Trans. Telecommun., 1 (3): 351-358 (1990)Study of a failure mechanism during UIS switching of planar PT-IGBT with current sense cell., , , , , , and . Microelectron. Reliab., 47 (9-11): 1756-1760 (2007)A novel UIS test system with Crowbar feedback for reduced failure energy in power devices testing., , , , , and . Microelectron. Reliab., 50 (9-11): 1479-1483 (2010)Experimental characterization of temperature distribution on Power MOS devices during Unclamped Inductive Switching., , , and . Microelectron. Reliab., 44 (9-11): 1455-1459 (2004)1300 V, 2 ms pulse inductive load switching test circuit with 20 ns selectable crowbar intervention., , , , , and . Microelectron. Reliab., 49 (9-11): 1386-1390 (2009)3D electro-thermal simulations of wide area power devices operating in avalanche condition., , , , , , , and . Microelectron. Reliab., 52 (9-10): 2385-2390 (2012)New developments of THERMOS3, a tool for 3D electro-thermal simulation of smart power MOSFETs., , and . Microelectron. Reliab., 47 (9-11): 1696-1700 (2007)Analysis of large area Trench-IGBT current distribution under UIS test with the aid of lock-in thermography., , , , , , , and . Microelectron. Reliab., 50 (9-11): 1725-1730 (2010)Detection of localized UIS failure on IGBTs with the aid of lock-in thermography., , , , , , , and . Microelectron. Reliab., 48 (8-9): 1432-1434 (2008)Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V Schottky diode., , , , , and . Microelectron. Reliab., 46 (9-11): 1784-1789 (2006)