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Recovery Condition in Si p-FinFETs.

L. Zhou, Z. Zhang, H. Yang, Z. Ji, Q. Liu, Q. Zhang, E. Simoen, H. Yin, J. Luo, A. Du, C. Zhao, and W. Wang. IRPS, page 1-7. IEEE, (2021)

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Lu Yin

Renfu Yin

Li Yin

Zhihong Yin

Wenbing Yin

Other publications of authors with the same name

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.G. Yan, J. Bi, G. Xu, K. Xi, B. Li, L. Fan, and H. Yin. IEEE Access, (2020)Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors.G. Tian, J. Bi, G. Xu, K. Xi, X. Yang, S. Majumdar, H. Yin, Q. Xu, and W. Wang. Sci. China Inf. Sci., (2020)Investigation on dependency of thermal characteristics on gate/drain bias voltages in stacked nanosheet transistors.P. Zhao, L. Cao, F. Zhang, H. Xu, W. Gan, Q. Zhang, Z. Zhang, J. Yao, G. Tian, K. Luo and 2 other author(s). Microelectron. J., (November 2023)A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.L. Zhou, Z. Zhang, H. Yang, Z. Ji, Q. Liu, Q. Zhang, E. Simoen, H. Yin, J. Luo, A. Du and 2 other author(s). IRPS, page 1-7. IEEE, (2021)Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks.H. Yang, L. Qi, Y. Zhang, B. Tang, Q. Liu, H. Xu, X. Ma, X. Wang, Y. Li, H. Yin and 5 other author(s). Sci. China Inf. Sci., 63 (2): 129403 (2020)Investigation on Contacts Thermal Stability for 3D Sequential Integration.S. Mao, J. Liu, Y. Wang, W. Liu, Y. Hu, H. Cui, R. Zhang, H. Liu, Z. Wang, N. Zhou and 10 other author(s). IRPS, page 37-1. IEEE, (2022)Transfer Learning for Improving Seismic Building Damage Assessment.Q. Lin, T. Ci, L. Wang, S. Mondal, H. Yin, and Y. Wang. Remote. Sens., 14 (1): 201 (2022)Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit.J. Huo, W. Huang, F. Zhang, S. Zhang, W. Gan, Q. Huo, Y. Cai, Q. Zhang, Y. Li, H. Zhu and 2 other author(s). Microelectron. J., (2021)Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications.Z. Zhang, G. Tian, J. Huo, F. Zhang, Q. Zhang, G. Xu, Z. Wu, Y. Cheng, Y. Liu, and H. Yin. Sci. China Inf. Sci., (October 2023)Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment.B. Li, Y. Huang, J. Wu, Y. Huang, B. Li, Q. Zhang, L. Yang, F. Wan, J. Luo, Z. Han and 1 other author(s). Microelectron. Reliab., (2018)

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Disambiguation of "Yin, Huaxiang"

Please choose a person to relate this publication to

Lu Yin

Renfu Yin

Li Yin

Zhihong Yin

Wenbing Yin

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BibSonomy

Disambiguation of "Yin, Huaxiang"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.

Please choose a person to relate this publication to

Lu Yin

Renfu Yin

Li Yin

Zhihong Yin

Wenbing Yin

Other publications of authors with the same name

Disambiguation