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25.4 A 500Mb/s 200pJ/b die-to-die bidirectional link with 24kV surge isolation and 50kV/µs CMR using resonant inductive coupling in 0.18µm CMOS.

, , , , , , , , , and . ISSCC, page 434-435. IEEE, (2017)

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Maximizing the Data Rate of an Inductively Coupled Chip-to-Chip Link by Resetting the Channel State Variables., , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 66-I (9): 3531-3543 (2019)25.4 A 500Mb/s 200pJ/b die-to-die bidirectional link with 24kV surge isolation and 50kV/µs CMR using resonant inductive coupling in 0.18µm CMOS., , , , , , , , , and . ISSCC, page 434-435. IEEE, (2017)23.5 A 7.6mW IR-UWB Receiver Achieving -13dBm Blocker Resilience with a Linear RF Front-End., , , , , , , , , and 1 other author(s). ISSCC, page 408-410. IEEE, (2024)An 8.7 mW/TX, 21 mW/RX 6-to-9GHz IEEE 802.15.4a/4z Compliant IR-UWB Transceiver with Pulse Pre-Emphasis achieving 14mm Ranging Precision., , , , , , , , , and 15 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)A 22-nm FDSOI CMOS Low-Noise Active Balun Achieving p-p Output Swing Over 0.01-5.4-GHz for Direct RF Sampling Applications., , and . IEEE J. Solid State Circuits, 57 (5): 1432-1445 (2022)A Baseband-Matching-Resistor Noise-Canceling Receiver With a Three-Stage Inverter-Only OpAmp for High In-Band IIP3 and Wide IF Applications., , and . IEEE J. Solid State Circuits, 56 (7): 1994-2006 (2021)