Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Multi-context non-volatile content addressable memory using magnetic tunnel junctions.

E. Deng, L. Anghel, G. Prenat, and W. Zhao. NANOARCH, page 103-108. ACM, (2016)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Hussain Eryani

Husam Abdullah Anas al- Eryani

Susanne al- Eryani

Aysel Eryasar

Zhiguo Deng

Other publications of authors with the same name

Multi-context non-volatile content addressable memory using magnetic tunnel junctions.E. Deng, L. Anghel, G. Prenat, and W. Zhao. NANOARCH, page 103-108. ACM, (2016)A Novel MTJ-Based Non-Volatile Ternary Content-Addressable Memory for High-Speed, Low-Power, and High-Reliable Search Operation.C. Wang, D. Zhang, L. Zeng, E. Deng, J. Chen, and W. Zhao. IEEE Trans. Circuits Syst. I Regul. Pap., 66-I (4): 1454-1464 (2019)A Reconfigurable Arbiter PUF Based on STT-MRAM.R. Ali, Y. Wang, H. Ma, Z. Hou, D. Zhang, E. Deng, and W. Zhao. ISCAS, page 1-5. IEEE, (2021)Synchronous full-adder based on complementary resistive switching memory cells.Y. Zhang, E. Deng, J. Klein, D. Querlioz, D. Ravelosona, C. Chappert, W. Zhao, M. Moreau, J. Portal, M. Bocquet and 3 other author(s). NEWCAS, page 1-4. IEEE, (2013)A Novel Multi-Context Non-Volatile Content-Addressable Memory Cell and Multi-Level Architecture for High Reliability and Density.X. Wang, D. Zhang, K. Zhang, E. Deng, Y. Wang, and W. Zhao. NVMSA, page 1-6. IEEE, (2021)Fully Single Event Double Node Upset Tolerant Design for Magnetic Random Access Memory.D. Zhang, X. Wang, K. Zhang, L. Zeng, Y. Wang, B. Wang, E. Deng, C. Wang, P. Wu, Y. Zhang and 1 other author(s). ISCAS, page 1-5. IEEE, (2021)Robust magnetic full-adder with voltage sensing 2T/2MTJ cell.E. Deng, Y. Wang, Z. Wang, J. Klein, B. Dieny, G. Prenat, and W. Zhao. NANOARCH, page 27-32. IEEE Computer Society, (2015)Spin-Orbit Torque Nonvolatile Flip-Flop Designs.E. Deng, W. Kang, W. Zhao, S. Wei, Y. Wang, and D. Zhang. ISCAS, page 1-5. IEEE, (2021)HSC: A Hybrid Spin/CMOS Logic Based In-Memory Engine with Area-Efficient Mapping Strategy.Y. Huang, E. Deng, J. Bai, Q. Yang, W. Kang, and B. Pan. ISCAS, page 1-5. IEEE, (2021)High-Density and Fast-Configuration Non-Volatile Look-Up Table Based on NAND-Like Spintronic Memory.H. Zhang, W. Kang, Z. Wang, E. Deng, Y. Zhang, and W. Zhao. APCCAS, page 382-385. IEEE, (2018)

BibSonomy

Disambiguation of "Deng, Erya"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Multi-context non-volatile content addressable memory using magnetic tunnel junctions.

Please choose a person to relate this publication to

Hussain Eryani

Husam Abdullah Anas al- Eryani

Susanne al- Eryani

Aysel Eryasar

Zhiguo Deng

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Deng, Erya"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Multi-context non-volatile content addressable memory using magnetic tunnel junctions.

Please choose a person to relate this publication to

Hussain Eryani

Husam Abdullah Anas al- Eryani

Susanne al- Eryani

Aysel Eryasar

Zhiguo Deng

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Multi-context non-volatile content addressable memory using magnetic tunnel junctions.