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Germanium channel MOSFETs: Opportunities and challenges., , , , , , and . IBM J. Res. Dev., 50 (4-5): 377-386 (2006)Impact of Phase-Change Memory Drift on Energy Efficiency and Accuracy of Analog Compute-in-Memory Deep Learning Inference (Invited)., , , , , , , , , and 11 other author(s). IRPS, page 1-10. IEEE, (2023)High-k/metal gate innovations enabling continued CMOS scaling.. ESSCIRC, page 50-58. IEEE, (2011)A Heterogeneous and Programmable Compute-In-Memory Accelerator Architecture for Analog-AI Using Dense 2-D Mesh., , , , , , , , , and 5 other author(s). IEEE Trans. Very Large Scale Integr. Syst., 31 (1): 114-127 (2023)Electron mobility in thin In0.53Ga0.47As channel., , , , , , , , , and 8 other author(s). ESSDERC, page 292-295. IEEE, (2017)Advanced high-k dielectric stacks with polySi and metal gates: Recent progress and current challenges., , and . IBM J. Res. Dev., 50 (4-5): 387-410 (2006)PBTI in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks: Interface-state generation., , , , and . IRPS, page 5. IEEE, (2018)Emerging Neural Workloads and Their Impact on Hardware., , , , , , , , , and 5 other author(s). DATE, page 1462-1471. IEEE, (2020)Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation., , , , , and . ESSDERC, page 293-296. IEEE, (2022)Architectures and Circuits for Analog-memory-based Hardware Accelerators for Deep Neural Networks (Invited)., , , , , , , , , and 13 other author(s). ISCAS, page 1-5. IEEE, (2023)