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Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below., , , , , , , , , and 21 other author(s). ESSCIRC, page 88-91. IEEE, (2009)Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities., , , , , , , , , and 6 other author(s). ESSDERC, page 121-124. IEEE, (2012)FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration., , , , , , , , , and 6 other author(s). ESSDERC, page 110-113. IEEE, (2014)Characterization and development of NUV SiPMs for INFN optical modules for the SCT Medium Size Telescope proposed for the CTA Observatory., , , , , , , , , and 15 other author(s). IWASI, page 37-41. IEEE, (2019)FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration., , , , , , , , , and 6 other author(s). ESSDERC, page 110-113. IEEE, (2014)X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate., , , , , , , , , and 36 other author(s). IWASI, page 190-193. IEEE, (2023)Validation of Myocardial Elastography Using MR Tagging in Normal and Abnormal Human Hearts in Vivo., , , , , , and . ISBI, page 384-387. IEEE, (2007)