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Trapping induced parasitic effects in GaN-HEMT for power switching applications., , , , and . ICICDT, page 1-4. IEEE, (2015)Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate., , , , , , , , , and . Microelectron. Reliab., 53 (9-11): 1476-1480 (2013)Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications., , , , , , , , and . Microelectron. Reliab., 54 (9-10): 2237-2241 (2014)Optimization of ESD protection structures suitable for BCD6 smart power technology., , , , , and . Microelectron. Reliab., 43 (9-11): 1589-1594 (2003)Traps localization and analysis in GaN HEMTs., , , , and . Microelectron. Reliab., 54 (9-10): 2222-2226 (2014)Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics., , , and . Microelectron. Reliab., 53 (9-11): 1456-1460 (2013)Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 53 (9-11): 1444-1449 (2013)Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields., , , , , , , and . Microelectron. Reliab., 48 (8-9): 1370-1374 (2008)Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs., , , , , , , and . Microelectron. Reliab., 53 (9-11): 1461-1465 (2013)"Hot-plugging" of LED modules: Electrical characterization and device degradation., , , , , , and . Microelectron. Reliab., 53 (9-11): 1524-1528 (2013)