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Finite linewidth observed in photoluminescence spectra of individual In$_0.4$Ga$_0.6$As quantum dots, , , , , and . J.~Vac.~Sci.~Technol.~B, (1999)Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition, , , , , , and . Appl.~Phys.~Lett., (1997)Atomic structure of stacked InAs quantum dots grown by metal-organic chemical-vapor depostion, , , , , , and . Journal of Vacuum Science and Technology B, (1999)High-resolution x-ray diffraction of self-organized InGaAs/GaAs quantum dot structures, , , , and . Appl.~Phys.~Lett., 68 (6): 785--787 (1996)Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots, , , , , , , and . Appl.~Phys.~Lett., (1999)High-gain excitonic lasing from a single InAs monolayer in bulk GaAs, , , , , , and . Appl.~Phys.~Lett., 72 (12): 1433--1435 (1998)Röntgenbeugung. talk at Blockseminar of Sfb787 Graduiertenkolleg, (May 2008)Semiconductor quantum dots for application in diode lasers, , , , , and . Thin Solid Films, (1998)