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Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose.

, , , , , , and . MIXDES, page 306-309. IEEE, (2019)

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Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS., , , , , , , , and . MIXDES, page 313-318. IEEE, (2018)An 8W-2MHz buck converter with adaptive dead time tolerant to radiation and high magnetic field., , , , , , , , , and 1 other author(s). ESSCIRC, page 438-441. IEEE, (2010)Integrated circuits for particle physics experiments., , , , , , , , , and 2 other author(s). IEEE J. Solid State Circuits, 35 (12): 2018-2030 (2000)Total ionizing dose effects in shallow trench isolation oxides., , , , , , and . Microelectron. Reliab., 48 (7): 1000-1007 (2008)A Reliability and Efficiency Optimization System for Hard-Switching DC/DC Converters., , , , , and . NEWCAS, page 157-161. IEEE, (2018)Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose., , , , , , and . MIXDES, page 306-309. IEEE, (2019)Extending a 65nm CMOS process design kit for high total ionizing dose effects., , , , , , , , , and . MOCAST, page 1-4. IEEE, (2018)Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC., , , , , , , , and . ESSDERC, page 146-149. IEEE, (2016)