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280-GHz Frequency Multiplier Chains in 250-nm InP HBT Technology., , , and . IEEE J. Solid State Circuits, 58 (9): 2421-2429 (September 2023)5-GHz Injection-Locked Delay Cell With 10-25 ns Adjustable Group Delay in SiGe BiCMOS., , , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 71 (3): 1042-1046 (March 2024)Integrated Output Matching Networks for Class-J/J-1 Power Amplifiers., , and . IEEE Trans. Circuits Syst. I Regul. Pap., 66-I (8): 2921-2934 (2019)100-300GHz Wireless: ICs, Arrays, and Systems., , , , , , and . BCICTS, page 1-4. IEEE, (2021)A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT Technology., , , and . BCICTS, page 191-194. IEEE, (2022)An X-Band Class-J Power Amplifier With Active Load Modulation to Boost Drain Efficiency., , , and . IEEE Trans. Circuits Syst., 67-I (10): 3364-3377 (2020)Millimeter-Wave SiGe Radiometer Front End With Transformer-Based Dicke Switch and On-Chip Calibration Noise Source., , , , , and . IEEE J. Solid State Circuits, 56 (5): 1464-1474 (2021)CMOS Full-Duplex Mixer-First Receiver With Adaptive Self-Interference Cancellation., , and . IEEE Trans. Circuits Syst. I Regul. Pap., 68 (2): 868-878 (2021)Temperature-Dependent Comparison Between Delay of CNT and Copper Interconnects., and . IEEE Trans. Very Large Scale Integr. Syst., 24 (2): 803-807 (2016)On Temperature Dependency of Delay for Local, Intermediate, and Repeater Inserted Global Copper Interconnects., and . IEEE Trans. Very Large Scale Integr. Syst., 23 (12): 3143-3147 (2015)