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Variation-Aware Physics-Based Electromigration Modeling and Experimental Calibration for VLSI Interconnects.

, , , , , , , and . IRPS, page 1-6. IEEE, (2019)

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A tool flow for predicting system level timing failures due to interconnect reliability degradation., , , , , and . ACM Great Lakes Symposium on VLSI, page 291-296. ACM, (2008)Time-Dependent Electromigration Modeling for Workload-Aware Design-Space Exploration in STT-MRAM., , , , , , , , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 41 (12): 5327-5332 (2022)A pragmatic network-aware paradigm for system-level electromigration predictions at scale., , , and . IRPS, page 1-6. IEEE, (2023)A Novel System-Level Physics-Based Electromigration Modelling Framework: Application to the Power Delivery Network., , , , and . SLIP, page 1-7. IEEE, (2021)Physics based modeling of bimodal electromigration failure distributions and variation analysis for VLSI interconnects., , , , , , , and . IRPS, page 1-5. IEEE, (2020)Variation-Aware Physics-Based Electromigration Modeling and Experimental Calibration for VLSI Interconnects., , , , , , , and . IRPS, page 1-6. IEEE, (2019)Evaluation of via density and low-k Young's modulus influence on mechanical performance of advanced node multi-level Back-End-Of-Line., , , , , and . Microelectron. Reliab., (2016)Impact of via density and passivation thickness on the mechanical integrity of advanced Back-End-Of-Line interconnects., , , , , , , , , and 1 other author(s). Microelectron. Reliab., (2017)Microstructure simulation of grain growth in Cu through silicon vias using phase-field modeling., , , , , , , and . Microelectron. Reliab., 55 (5): 765-770 (2015)Study of copper drift during TDDB of intermetal dielectrics by using fully passivated MOS capacitors as test vehicle., , , and . Microelectron. Reliab., 48 (8-9): 1384-1387 (2008)