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24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µ m2 Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference.

J. Yang, X. Xue, X. Xu, Q. Wang, H. Jiang, J. Yu, D. Dong, F. Zhang, H. Lv, and M. Liu. ISSCC, page 336-338. IEEE, (2021)

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Xue Xue Zhang

Xiaoyong Zhang

Xiaoyong Tian

Xiaoyong Zhang

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A 2Mb ReRAM with two bits error correction codes circuit for high reliability application.J. Yang, Y. Meng, X. Xue, R. Huang, Q. Zhou, J. Wu, and Y. Lin. ASICON, page 1-4. IEEE, (2013)An Emerging NVM CIM Accelerator With Shared-Path Transpose Read and Bit-Interleaving Weight Storage for Efficient On-Chip Training in Edge Devices.Z. Guo, D. Chen, C. Zhao, J. Fang, J. Jiang, Y. Liu, H. Tian, X. Xiong, K. Zhou, X. Xue and 2 other author(s). IEEE Trans. Circuits Syst. II Express Briefs, 70 (7): 2645-2649 (July 2023)HashC: Making deep learning coverage testing finer and faster.W. Sun, X. Xue, Y. Lu, J. Zhao, and M. Sun. J. Syst. Archit., (November 2023)A 9Mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.J. Yang, Q. Luo, X. Xue, H. Jiang, Q. Wu, Z. Han, Y. Cao, Y. Han, C. Dou, H. Lv and 2 other author(s). ISSCC, page 498-499. IEEE, (2023)Novel 15T SRAM Cell for Low Voltage High Reliability Application.Y. Han, Y. Zhao, Q. Hu, X. Liu, B. Peng, H. Jiang, J. Yang, and X. Xue. ASICON, page 1-4. IEEE, (2021)Nonvolatile Binary CNN Accelerator with Extremely Low Standby Power using RRAM for IoT Applications.Y. Cai, K. Zhou, X. Xue, M. Wang, and X. Zeng. ASICON, page 1-4. IEEE, (2019)A High Reliability 500 µW Resistance-to-Digital Interface Circuit for SnO2 Gas Sensor IoT Applications.J. Yang, X. Li, Q. Ding, X. Xue, X. Xu, Q. Luo, H. Lv, and M. Liu. ASICON, page 1-4. IEEE, (2019)Novel RRAM programming technology for instant-on and high-security FPGAs.X. Xue, W. Jian, Y. Xie, Q. Dong, R. Yuan, and Y. Lin. ASICON, page 291-294. IEEE, (2011)A 1T2R1C ReRAM CIM Accelerator With Energy-Efficient Voltage Division and Capacitive Coupling for CNN Acceleration in AI Edge Applications.D. Chen, Z. Guo, J. Fang, C. Zhao, J. Jiang, K. Zhou, H. Tian, X. Xiong, X. Xue, and X. Zeng. IEEE Trans. Circuits Syst. II Express Briefs, 70 (1): 276-280 (2023)A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices.J. Yang, R. Lin, K. Zhou, Y. Zhang, X. Xue, and H. Lv. Microelectron. J., (2022)

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Disambiguation of "Xue, Xiaoyong"

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24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µ m2 Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference.

Please choose a person to relate this publication to

Xue Xue Zhang

Xiaoyong Zhang

Xiaoyong Tian

Xiaoyong Zhang

Xiaoyong Zhang

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Xue, Xiaoyong"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML 24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µ m2 Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference.

Please choose a person to relate this publication to

Xue Xue Zhang

Xiaoyong Zhang

Xiaoyong Tian

Xiaoyong Zhang

Xiaoyong Zhang

Other publications of authors with the same name

Disambiguation

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URL
DOI
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24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µ m2 Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference.