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A GHz Spintronic-Based RF Oscillator., , , , , , , , , and 2 other author(s). IEEE J. Solid State Circuits, 45 (1): 214-223 (2010)Multilevel Programming Reliability in Si-doped GeSbTe for Storage Class Memory., , , , , , , , , and . IRPS, page 1-6. IEEE, (2021)Multilayer OTS Selectors Engineering for High Temperature Stability, Scalability and High Endurance., , , , , , , , , and 7 other author(s). IMW, page 1-4. IEEE, (2021)Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate., , , , , , , , , and 7 other author(s). IMW, page 1-4. IEEE, (2022)Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement., , , , , , , , , and 6 other author(s). ESSDERC, page 225-228. IEEE, (2022)Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction., , , , , , , , , and 3 other author(s). ESSDERC, page 233-236. IEEE, (2022)OTS selector devices: Material engineering for switching performance., , , , , , , , and . ICICDT, page 113-116. IEEE, (2018)A GHz spintronic-based RF oscillator., , , , , , , , , and 6 other author(s). ISSCC, page 196-197. IEEE, (2009)TiTe/Ge2Sb2Te5Bi-layer-based Phase-Change Memory Targeting Storage Class Memory., , , , , , , , and . ESSDERC, page 237-240. IEEE, (2022)Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance., , , , , , , , , and 2 other author(s). IRPS, page 6. IEEE, (2018)