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Disambiguation of "Tsukamoto, Yasumasa"

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A 45nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations.

, , , , , , , , , , , , , , , and . ISSCC, page 326-606. IEEE, (2007)

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Masaji Tsukamoto

Masaaki Tsukamoto

Nobuko Ohashi Tsukamoto

 

Other publications of authors with the same name

NBTI/PBTI separated BTI monitor with 4.2x sensitivity by standard cell based unbalanced ring oscillator., , , , and . A-SSCC, page 201-204. IEEE, (2017)A 28nm high density 1R/1W 8T-SRAM macro with screening circuitry against read disturb failure., , , , , and . CICC, page 1-4. IEEE, (2013)A 45-nm Bulk CMOS Embedded SRAM With Improved Immunity Against Process and Temperature Variations., , , , , , , , , and 6 other author(s). IEEE J. Solid State Circuits, 43 (1): 180-191 (2008)A 65 nm Embedded SRAM With Wafer Level Burn-In Mode, Leak-Bit Redundancy and Cu E-Trim Fuse for Known Good Die., , , , , , , , , and 8 other author(s). IEEE J. Solid State Circuits, 43 (1): 96-108 (2008)A cost-effective 45nm 6T-SRAM reducing 50mV Vmin and 53% standby leakage with multi-Vt asymmetric halo MOS and write assist circuitry., , , , , , and . ISQED, page 438-441. IEEE, (2013)A 65nm Embedded SRAM with Wafer-Level Burn-In Mode, Leak-Bit Redundancy and E-Trim Fuse for Known Good Die., , , , , , , , , and 7 other author(s). ISSCC, page 488-617. IEEE, (2007)A 512-kb 1-GHz 28-nm partially write-assisted dual-port SRAM with self-adjustable negative bias bitline., , , , , , , and . VLSIC, page 1-2. IEEE, (2014)A 45nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations., , , , , , , , , and 6 other author(s). ISSCC, page 326-606. IEEE, (2007)A 0.41 µA Standby Leakage 32 kb Embedded SRAM with Low-Voltage Resume-Standby Utilizing All Digital Current Comparator in 28 nm HKMG CMOS., , , , , , and . IEEE J. Solid State Circuits, 48 (4): 917-923 (2013)A Fully Standard-Cell Based On-Chip BTI and HCI Monitor with 6.2x BTI sensitivity and 3.6x HCI sensitivity at 7 nm Fin-FET Process., , , , , and . A-SSCC, page 195-196. IEEE, (2018)