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A 234-261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4-7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output.

, , , , , and . IEEE J. Solid State Circuits, 51 (9): 2054-2065 (2016)

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