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Disambiguation of "Ohmi, Shun'ichiro"

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Ultrathin HfN Multilayer Gate Insulator Formation with High Dielectric Constant Induced by Interface Polarization.

, , and . DRC, page 181-182. IEEE, (2019)

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Modulation of PtSi Work Function by Alloying with Low Work Function Metal., , and . IEICE Trans. Electron., 94-C (5): 775-779 (2011)A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels., and . IEICE Trans. Electron., 90-C (5): 994-999 (2007)High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory., and . DRC, page 1-2. IEEE, (2020)The Effect of Kr/O2 Sputtering on the Ferroelectric Properties of SrBi2Ta2O9 Thin Film Formation., , , , , and . IEICE Trans. Electron., 102-C (6): 441-446 (2019)In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering., , , and . IEICE Trans. Electron., 103-C (6): 299-303 (2020)In-situ formation of Hf-based MONOS structures for non-volatile memory applications., and . IEICE Electron. Express, 12 (24): 20150969 (2015)Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering., , and . IEICE Electron. Express, 10 (18): 20130651 (2013)MFSFET with Ferroelectric HfN for Analog Memory Application., , , , and . DRC, page 1-2. IEEE, (2022)Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer., , and . IEICE Trans. Electron., 94-C (5): 767-770 (2011)PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process., , , and . IEICE Trans. Electron., 101-C (5): 311-316 (2018)