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Self-heating experimental study of 600V PT-IGBTs under low dissipation energies.

X. Perpiñà, X. Jordà, N. Mestres, M. Vellvehí, P. Godignon, and J. Millán. Microelectron. J., 35 (10): 841-847 (2004)

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Carlos Millán Herrera

Jaime Augusto Millán Herrera

Humberto Jorge José

Nadine José Gonzalez

José Baena

Other publications of authors with the same name

Reduction of self-heating effect on SOIM devices.J. Roig, D. Flores, M. Vellvehí, J. Rebollo, and J. Millán. Microelectron. Reliab., 42 (1): 61-66 (2002)Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications.J. Roig, D. Flores, S. Hidalgo, J. Rebollo, and J. Millán. Microelectron. J., 35 (3): 291-297 (2004)A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs.M. Florentin, J. Millán, P. Godignon, M. Alexandru, A. Constant, and B. Schmidt. ESSDERC, page 150-153. IEEE, (2014)Wide band-gap power semiconductor devices.J. Millán. IET Circuits Devices Syst., 1 (5): 372-379 (2007)Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs.A. Fontserè, A. Pérez-Tomás, P. Godignon, J. Millán, H. Vleeschouwer, J. Parsey, and P. Moens. Microelectron. Reliab., 52 (9-10): 2220-2223 (2012)The electron irradiation effects on silicon gate dioxide used for power MOS devices.M. Badila, P. Godignon, J. Millán, S. Berberich, and G. Brezeanu. Microelectron. Reliab., 41 (7): 1015-1018 (2001)IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.A. Pérez-Tomás, X. Jordà, P. Godignon, J. Gálvez, M. Vellvehí, and J. Millán. Microelectron. J., 35 (8): 659-666 (2004)Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current.X. Perpiñà, J. Serviere, J. Saiz, D. Barlini, M. Mermet-Guyennet, and J. Millán. Microelectron. Reliab., 46 (9-11): 1834-1839 (2006)High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs.V. Banu, P. Godignon, M. Alexandru, M. Vellvehí, X. Jordà, and J. Millán. ESSCIRC, page 427-430. IEEE, (2013)4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits.M. Alexandru, V. Banu, P. Godignon, M. Vellvehí, and J. Millán. ESSDERC, page 103-106. IEEE, (2013)

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Disambiguation of "Millán, José"

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Self-heating experimental study of 600V PT-IGBTs under low dissipation energies.

Please choose a person to relate this publication to

Carlos Millán Herrera

Jaime Augusto Millán Herrera

Humberto Jorge José

Nadine José Gonzalez

José Baena

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Millán, José"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Self-heating experimental study of 600V PT-IGBTs under low dissipation energies.

Please choose a person to relate this publication to

Carlos Millán Herrera

Jaime Augusto Millán Herrera

Humberto Jorge José

Nadine José Gonzalez

José Baena

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
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APA
Chicago
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Self-heating experimental study of 600V PT-IGBTs under low dissipation energies.