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Design and Implementation of a Hybrid, ADC/DAC-Free, Input-Sparsity-Aware, Precision Reconfigurable RRAM Processing-in-Memory Chip.

J. Wang, T. Zhang, S. Liu, Y. Liu, Y. Wu, S. Hu, T. Chen, Y. Liu, Y. Yang, и R. Huang. IEEE J. Solid State Circuits, 59 (2): 595-604 (февраля 2024)

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Ru-Jin Huang

Ru Zhang

Ru Xie

Ru Hao

Tomasz Ru

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The design of energy-saving filtering mechanism for sensor networks.R. Huang, и G. Xu. ICMLC, стр. 79-85. IEEE, (2010)Layout dependent BTI and HCI degradation in nano CMOS technology: A new time-dependent LDE and impacts on circuit at end of life.P. Ren, R. Wang, и R. Huang. ICICDT, стр. 1-3. IEEE, (2016)Benchmarking TFET from a circuit level perspective: Applications and guideline.L. Guo, L. Ye, C. Chen, Q. Huang, L. Yang, Z. Lv, X. An, и R. Huang. ISCAS, стр. 1-4. IEEE, (2017)Evaluation of SRAM Vmin shift induced by random telegraph noise (RTN): physical understanding and prediction method.S. Guo, Z. Lin, R. Wang, D. Mao, Y. Wang, и R. Huang. ISCAS, стр. 1-4. IEEE, (2018)New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology.P. Ren, C. Liu, S. Wan, J. Zhang, Z. Yu, N. Liu, Y. Sun, R. Wang, C. Zhan, Z. Gan и 3 other автор(ы). IRPS, стр. 3-1. IEEE, (2018)A 3D multi-layer CMOS-RRAM accelerator for neural network.H. Huang, L. Ni, Y. Wang, H. Yu, Z. Wang, Y. Cai, и R. Huang. 3DIC, стр. 1-5. IEEE, (2016)Realization of Nanoscale Neuromorphic Memristor Array with Low Power Consumption.C. Cheng, T. Zhang, C. Liu, J. Zhu, L. Xu, X. Yan, Y. Yang, и R. Huang. ASICON, стр. 1-4. IEEE, (2019)OMI/TMI-based Modeling and Fast Simulation of Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits.R. Wang, Z. Zhang, S. Guo, Q. Wang, D. Wu, J. Wang, и R. Huang. ASICON, стр. 1-4. IEEE, (2019)Neuromorphic Devices and Networks Based on Memristors with Ionic Dynamics.Y. Yang, K. Yang, и R. Huang. Handbook of Memristor Networks, Springer, (2019)Compact Modeling of Phase Change Memory with Parameter Extractions.F. Ding, X. Li, Y. Chen, Z. Song, R. Wang, C. Prawoto, M. Chan, L. Zhang, и R. Huang. ESSDERC, стр. 308-311. IEEE, (2022)

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