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Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications., , , , , , , , , and 8 other author(s). Proc. IEEE, 105 (6): 1035-1050 (2017)A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications., , , , , and . ESSCIRC, page 369-372. IEEE, (2021)14.5 A 0.53THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13μm SiGe BiCMOS., , , , , , , and . ISSCC, page 256-257. IEEE, (2014)Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance., , , , , , , , , and 1 other author(s). BCICTS, page 1-7. IEEE, (2021)A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications., , , , , and . IEEE J. Solid State Circuits, 57 (7): 2024-2034 (2022)Analog 2: 1 Multiplexer with over 110 GHz Bandwidth in SiGe BiCMOS Technology., , , , , , , , , and . BCICTS, page 1-4. IEEE, (2021)Complementary RF-LDMOS transistors realized with standard CMOS implantations., and . ESSDERC, page 181-184. IEEE, (2012)SiGe BiCMOS Current Status and Future Trends in Europe., , , , , , , and . BCICTS, page 64-71. IEEE, (2018)122 GHz low-noise-amplifier in sige technology., , , , , , , and . ESSCIRC, page 316-319. IEEE, (2009)Device Architectures for High-speed SiGe HBTs., and . BCICTS, page 1-7. IEEE, (2019)