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The sensitivity of radiation-induced leakage to STI topology and sidewall doping., , , , , , and . Microelectron. Reliab., 51 (5): 889-894 (2011)Exploration of the Impact of Physical Integration Schemes on Soft Errors in 3D ICs Using Monte Carlo Simulation., , , and . IRPS, page 1-7. IEEE, (2019)Total-ionizing-dose effects and reliability of carbon nanotube FET devices., , , , , , and . Microelectron. Reliab., 54 (11): 2355-2359 (2014)Accurate numerical models for simulation of radiation events in nano-scale semiconductor devices., , , and . Math. Comput. Simul., 79 (4): 1086-1095 (2008)Multiscale Numerical Models for Simulation of Radiation Events in Semiconductor Devices., , , , and . ICCS (2), volume 5102 of Lecture Notes in Computer Science, page 281-290. Springer, (2008)The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies., , , , , and . Microelectron. Reliab., 52 (11): 2521-2526 (2012)Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs., , , , , , , , , and . ASICON, page 1-4. IEEE, (2021)Multi-cell soft errors at the 16-nm FinFET technology node., , , , , , and . IRPS, page 4. IEEE, (2015)