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Disambiguation of "Linder, Barry P."

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Analysis of the effect of the gate oxide breakdown on SRAM stability.

, , , , , , , , , and . Microelectron. Reliab., 42 (9-11): 1445-1448 (2002)

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Georg Barry

Boubakar Barry

Georg Barry

Sebastian Barry

James Barry

 

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Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery., , , and . IRPS, page 1-5. IEEE, (2019)Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD., , , and . IRPS, page 1-5. IEEE, (2019)A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation., , , , , , , and . IRPS, page 2. IEEE, (2022)Dependence of Post-Breakdown Conduction on Gate Oxide Thickness., , and . Microelectron. Reliab., 42 (9-11): 1481-1484 (2002)Influence and model of gate oxide breakdown on CMOS inverters., , , , and . Microelectron. Reliab., 43 (9-11): 1439-1444 (2003)Analyzing path delays for accelerated testing of logic chips., , , , , , , and . IRPS, page 6. IEEE, (2015)Analysis of the effect of the gate oxide breakdown on SRAM stability., , , , , , , , , and . Microelectron. Reliab., 42 (9-11): 1445-1448 (2002)Electromigration characteristics of power grid like structures., , , , and . IRPS, page 4. IEEE, (2018)Improving and optimizing reliability in future technologies with high-κ dielectrics., , , and . VLSI-DAT, page 1-4. IEEE, (2013)A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL)., , , , , and . IRPS, page 2. IEEE, (2015)