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A monolithic 2.45 GHz, 0.56 W power amplifier with 45% PAE at 2.4 V in standard 25 GHz fT Si-bipolar.

, , , , , and . ISCAS (4), page 803-806. IEEE, (2002)

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Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology., , , , , , , and . ESSCIRC, page 356-359. IEEE, (2007)Personal communications transceiver architectures for monolithic integration., , , , , , , , and . PIMRC, page 363-368. (1994)Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology., , , , , and . IEEE J. Solid State Circuits, 39 (10): 1773-1777 (2004)Merged power amplifier and mixer circuit topology for radar applications in CMOS., , , , and . ESSCIRC, page 300-303. IEEE, (2009)A fully integrated 5.3 GHz, 2.4V, 0.3 W SiGe-bipolar power amplifier with 50Ω output., , , , and . ESSCIRC, page 561-564. IEEE, (2003)An Integrated Gravimetric FBAR Circuit for Operation in Liquids Using a Flip-Chip Extended 0.13μm CMOS Technology., , , , , , , , , and 3 other author(s). ISSCC, page 392-610. IEEE, (2007)A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar., , , , , , , and . ISSCC, page 430-613. IEEE, (2007)A testbed for DECT physical- and medium access-layer., , , and . PIMRC, page 349-356. IEEE, (1992)Comparison of 24 GHz receiver front-ends using active and passive mixers in CMOS., , , , , and . IET Circuits Devices Syst., 3 (6): 340-349 (2009)A monolithic 2.45 GHz, 0.56 W power amplifier with 45% PAE at 2.4 V in standard 25 GHz fT Si-bipolar., , , , , and . ISCAS (4), page 803-806. IEEE, (2002)