Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

J. Jiang, Z. Bai, Z. Chen, L. He, D. Zhang, Q. Zhang, J. Shi, M. Park, J. Scott, C. Hwang, and others. Nature materials, 17 (1): 49 (2018)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Seong-Cheol Choi

Seong-Cheol Kong

Jun-Seong Hwang

Ki-Chang Seong

Seunghyeon Seong

Other publications of authors with the same name

Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO3 Thin FilmsZ. Bai, X. Cheng, D. Chen, D. Zhang, L. Chen, J. Scott, C. Hwang, and A. Jiang. Advanced Functional Materials, (2018)Kernel Application of the Stacked Crossbar Array Composed of Self-Rectifying Resistive Switching Memory for Convolutional Neural Networks.Y. Kim, J. Kim, S. Kim, Y. Kwon, G. Kim, J. Jeon, D. Kwon, J. Yoon, and C. Hwang. Adv. Intell. Syst., 2 (2): 1900116 (2020)A Stateful Logic Family Based on a New Logic Primitive Circuit Composed of Two Antiparallel Bipolar Memristors.N. Xu, T. Park, H. Kim, X. Shao, K. Yoon, T. Park, L. Fang, K. Kim, and C. Hwang. Adv. Intell. Syst., 2 (1): 1900082 (2020)Combination-Encoding Content-Addressable Memory With High Content Density.G. Kim, V. Kornijcuk, J. Kim, D. Kim, C. Hwang, and D. Jeong. IEEE Access, (2019)Optimal Distribution of Spiking Neurons Over Multicore Neuromorphic Processors.G. Kim, V. Kornijcuk, J. Kim, C. Hwang, and D. Jeong. IEEE Access, (2020)Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges.J. Lee, J. Kim, D. Suh, I. Kim, G. Han, S. Ryu, S. Lee, M. Na, S. Cha, H. Park and 1 other author(s). IMW, page 1-4. IEEE, (2022)eWB: Event-Based Weight Binarization Algorithm for Spiking Neural Networks.D. Kim, G. Kim, C. Hwang, and D. Jeong. IEEE Access, (2021)Reliable Domain-Specific Exclusive Logic Gates Using Reconfigurable Sequential Logic Based on Antiparallel Bipolar Memristors.T. Park, Y. Kim, J. Kim, J. Lee, and C. Hwang. Adv. Intell. Syst., (2022)A High-Speed True Random Number Generator Based on a Cu x Te 1- x Diffusive Memristor.K. Woo, J. Kim, J. Han, J. Choi, W. Kim, and C. Hwang. Adv. Intell. Syst., 3 (7): 2170057 (2021)Markov Chain Hebbian Learning Algorithm With Ternary Synaptic Units.G. Kim, V. Kornijcuk, D. Kim, I. Kim, J. Kim, H. Woo, J. Kim, C. Hwang, and D. Jeong. IEEE Access, (2019)

BibSonomy

Disambiguation of "Hwang, Cheol Seong"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

Please choose a person to relate this publication to

Seong-Cheol Choi

Seong-Cheol Kong

Jun-Seong Hwang

Ki-Chang Seong

Seunghyeon Seong

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Hwang, Cheol Seong"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

Please choose a person to relate this publication to

Seong-Cheol Choi

Seong-Cheol Kong

Jun-Seong Hwang

Ki-Chang Seong

Seunghyeon Seong

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories