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Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage., , , , , , , , , and . IRPS, page 10. IEEE, (2022)SiCILIA - Silicon Carbide Detectors for Intense Luminosity Investigations and Applications., , , , , , , , , and 33 other author(s). Sensors, 18 (7): 2289 (2018)Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface., , , , , , , , , and 5 other author(s). ESSDERC, page 295-298. IEEE, (2021)Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT., , , , , , , , , and 2 other author(s). IRPS, page 1-6. IEEE, (2019)Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs., , , , , , , and . IRPS, page 1-6. IEEE, (2023)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2021)