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Effects of hot carrier and irradiation stresses on advanced excimer laser annealed polycrystalline silicon thin film transistors., , , , , , , и . Microelectron. Reliab., 44 (9-11): 1631-1636 (2004)A temperature study of photosensitivity in SLS polycrystalline silicon TFTs., , , , и . Microelectron. Reliab., 52 (9-10): 2508-2511 (2012)Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques., , , , и . Microelectron. Reliab., 47 (9-11): 1378-1383 (2007)On the importance of the Vg, max-Vth parameter on LTPS TFT stressing behavior., , , и . Microelectron. Reliab., 50 (2): 190-194 (2010)Reliability and defectivity comparison of n- and p-channel SLS ELA polysilicon TFTs fabricated with a novel crystallization technique., , , , , и . Microelectron. Reliab., 48 (8-9): 1544-1548 (2008)Degradation of double-gate polycrystalline silicon TFTs due to hot carrier stress., , , и . Microelectron. Reliab., 47 (9-11): 1434-1438 (2007)An experimental study of the thermally activated processes in polycrystalline silicon thin film transistors., , , , и . Microelectron. Reliab., 47 (12): 2058-2064 (2007)Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycrystalline silicon thin film transistors., , , и . Microelectron. Reliab., 47 (9-11): 1841-1845 (2007)Degradation of polycrystalline silicon TFTs due to alpha particles irradiation stress., , и . Microelectron. Reliab., 50 (9-11): 1848-1851 (2010)