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High-Performance InGaAs-on-Silicon Technology Platform For Logic and RF Applications.

, , , , , and . BCICTS, page 1-6. IEEE, (2019)

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Cryogenic Characterization and Modeling of 14 nm Bulk FinFET Technology., , , , , , , and . ESSCIRC, page 67-70. IEEE, (2021)In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications., , , , , and . ESSDERC, page 257-260. IEEE, (2022)Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator., , , , , , , and . ESSDERC, page 166-169. IEEE, (2018)Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K., , , , , and . IRPS, page 1-4. IEEE, (2023)InGaAs FinFETs 3D Sequentially Integrated on FDSOI Si CMOS with Record Perfomance., , , , and . ESSDERC, page 162-165. IEEE, (2018)A system design approach toward integrated cryogenic quantum control systems., , , , , , , , , and 1 other author(s). CoRR, (2022)High-Performance InGaAs-on-Silicon Technology Platform For Logic and RF Applications., , , , , and . BCICTS, page 1-6. IEEE, (2019)A cryogenic SRAM based arbitrary waveform generator in 14 nm for spin qubit control., , , , , , , , , and 1 other author(s). ESSCIRC, page 57-60. IEEE, (2022)