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A 0.7 - 3.7 GHz six phase receiver front-end with third order harmonic rejection., , и . ESSCIRC, стр. 279-282. IEEE, (2013)A 1V SiGe power amplifier for 81-86 GHz E-band., , , и . NORCHIP, стр. 1-4. IEEE, (2013)A digital baseband for low power FSK based receiver in 65 nm CMOS., , и . ICECS, стр. 159-162. IEEE, (2014)Fully integrated radio over fiber downlink for distributed multi-antenna systems in 65 nm CMOS., , , и . NEWCAS, стр. 353-356. IEEE, (2014)A 1.6-2.6GHz 29dBm injection-locked power amplifier with 64% peak PAE in 65nm CMOS., , , и . ESSCIRC, стр. 299-302. IEEE, (2011)An LC-based tunable low-isolation device for adaptive duplexers., , , и . NORCHIP, стр. 1-4. IEEE, (2013)Comparison of two SiGe 2-stage E-band power amplifier architectures., , , и . APCCAS, стр. 666-669. IEEE, (2016)A 65-nm CMOS Low-Power Front-End for 3rd Generation DNA Sequencing., , , , , , и . IEEE SENSORS, стр. 1-4. IEEE, (2019)A 30dBm PA for MTC communication in 65nm CMOS technology., , , , и . LASCAS, стр. 147-150. IEEE, (2016)A 100-MHz CMOS wide-band IF amplifier., и . IEEE J. Solid State Circuits, 33 (4): 631-634 (1998)