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A 12 to 24 GHz high efficiency fully integrated 0.18 µm CMOS power amplifier.

, , , , , and . IEICE Electron. Express, 13 (14): 20160551 (2016)

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A 5-9 GHz CMOS Ultra-wideband power amplifier design using load-pull., , , , , and . ICECS, page 13-16. IEEE, (2013)A 54-68 GHz Power Amplifier With Improved Linearity and Efficiency in 40 nm CMOS., , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 69 (1): 40-44 (2022)A 6.15-10.9 Gb/s 0.58 pJ/Bit Reference-Less Half-Rate Clock and Data Recovery With "Phase Reset" Scheme., , , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 69 (2): 634-644 (2022)A high-efficiency good linearity 21 to 26.5 GHz fully integrated power amplifier using 0.18 μm CMOS technology., , , , , and . MWSCAS, page 1-4. IEEE, (2016)High Efficiency and Small Group Delay Variations 0.18- $\mu$ m CMOS UWB Power Amplifier., , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 66-II (4): 592-596 (2019)A 19-48.3-GHz 6th-Order Transformer-Based Injection-Locked Frequency Divider With 87.1% Locking Range in 40-nm CMOS., , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 68 (9): 3053-3057 (2021)A 12 to 24 GHz high efficiency fully integrated 0.18 µm CMOS power amplifier., , , , , and . IEICE Electron. Express, 13 (14): 20160551 (2016)A 50 - 90 GHz High Efficiency Fully integrated $0.13 m$ Si Ge Power Amplifier., , , and . ICM, page 74-77. IEEE, (2019)A 57-100 ​GHz 0.13 ​μm SiGe power amplifier with high output power and efficiency., and . Microelectron. J., (2021)7.5 A 224Gb/s/wire Single-Ended PAM-4 Transceiver Front-End with 29dB Equalization for 800GbE/1.6TbE., , , , , , , , , and 2 other author(s). ISSCC, page 132-134. IEEE, (2024)