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Reliability and performance scaling of very high speed SiGe HBTs., , , and . Microelectron. Reliab., 44 (3): 397-410 (2004)Scaling of SiGe Heterojunction Bipolar Transistors., , , and . Proc. IEEE, 93 (9): 1522-1538 (2005)RFCMOS technology from 0.25μm to 65nm: the state of the art., , , , , , , , , and 4 other author(s). CICC, page 217-224. IEEE, (2004)Foundation of rf CMOS and SiGe BiCMOS technologies., , , , , , , , , and 12 other author(s). IBM J. Res. Dev., 47 (2-3): 101-138 (2003)Product applications and technology directions with SiGe BiCMOS., , , , , , , , , and 10 other author(s). IEEE J. Solid State Circuits, 38 (9): 1471-1478 (2003)A scaleable, statistical SPICE Gummel-Poon model for SiGe HBTs., , , , , , , and . IEEE J. Solid State Circuits, 33 (9): 1439-1444 (1998)40-Gb/s circuits built from a 120-GHz fT SiGe technology., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 37 (9): 1106-1114 (2002)45-nm silicon-on-insulator CMOS technology integrating embedded DRAM for high-performance server and ASIC applications., , , , , , , , , and 10 other author(s). IBM J. Res. Dev., 55 (3): 5 (2011)Two CMOS Metastability Sensors., , , and . ITC, page 140-144. IEEE Computer Society, (1986)Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs., , , , , , , , , and 7 other author(s). CICC, page 559-566. IEEE, (2001)