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Impact of Total Ionizing Dose on Bulk Built-In Current Sensors with Dynamic Storage Cell.

, , , and . J. Electron. Test., 31 (4): 411-417 (2015)

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The effects of total ionizing dose on the neutron SEU cross section of a 130 nm 4 Mb SRAM memory., , , , , and . LATW, page 1-4. IEEE, (2014)Soft error rate in SRAM-based FPGAs under neutron-induced and TID effects., , , , , , and . LATW, page 1-6. IEEE, (2014)Investigating the effects of transient faults in Programmable Capacitor Arrays., , , and . LATW, page 1-6. IEEE, (2011)Rail to rail radiation hardened operational amplifier in standard CMOS technology with standard layout techniques., , and . Microelectron. Reliab., (2016)Impact of Total Ionizing Dose on Bulk Built-In Current Sensors with Dynamic Storage Cell., , , and . J. Electron. Test., 31 (4): 411-417 (2015)Influence of sampling frequency on TID response of SAR ADCs., , , , and . LATS, page 1-6. IEEE, (2020)Failure Mechanism and Sampling Frequency Dependency on TID Response of SAR ADCs., , , , , , , , , and 1 other author(s). J. Electron. Test., 37 (3): 329-343 (2021)Evaluation of a mixed-signal design diversity system under radiation effects., , , , , and . LATS, page 1-6. IEEE, (2017)Impact of TID-induced threshold deviations in analog building-blocks of operational amplifiers., , , , and . LATW, page 1-6. IEEE Computer Society, (2012)