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Enhanced power cycling capability of SiC Schottky diodes using press pack contacts.

, , , , and . Microelectron. Reliab., 52 (9-10): 2250-2255 (2012)

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High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs., , , , , and . ESSCIRC, page 427-430. IEEE, (2013)4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits., , , , and . ESSDERC, page 103-106. IEEE, (2013)SiC Integrated Circuit Control Electronics for High-Temperature Operation., , , , , , , and . IEEE Trans. Ind. Electron., 62 (5): 3182-3191 (2015)Enhanced power cycling capability of SiC Schottky diodes using press pack contacts., , , , and . Microelectron. Reliab., 52 (9-10): 2250-2255 (2012)Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress., , , , , and . Microelectron. Reliab., 48 (8-9): 1444-1448 (2008)Power cycling analysis method for high-voltage SiC diodes., , , , and . Microelectron. Reliab., (2016)Temperature effects on the ruggedness of SiC Schottky diodes under surge current., , , , , , , and . Microelectron. Reliab., 54 (9-10): 2207-2212 (2014)SiC Schottky Diodes for Harsh Environment Space Applications., , , , , , , , and . IEEE Trans. Ind. Electron., 58 (7): 2582-2590 (2011)Thermal cycling analysis of high temperature die-attach materials., , , , and . Microelectron. Reliab., 52 (9-10): 2314-2320 (2012)Modeling and Simulation of Photovoltaic Arrays in Matlab and Simulink., and . (January 2019)