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Reviewing the Evolution of the NAND Flash Technology., , , , , and . Proc. IEEE, 105 (9): 1609-1633 (2017)Erratic Effects of Irradiation in Floating Gate Memory Cells., , , and . IOLTS, page 51-56. IEEE Computer Society, (2006)Soft Errors induced by single heavy ions in Floating Gate memory arrays., , , and . DFT, page 275-284. IEEE Computer Society, (2005)40-mm2 3-V-only 50-MHz 64-Mb 2-b/cell CHE NOR flash memory., , , , , , , , , and 9 other author(s). IEEE J. Solid State Circuits, 35 (11): 1655-1667 (2000)Introduction to flash memory., , , and . Proc. IEEE, 91 (4): 489-502 (2003)Accelerated reliability testing of flash memory: Accuracy and issues on a 45nm NOR technology., , , , , , , , , and . ICICDT, page 37-40. IEEE, (2013)Cycling-induced threshold-voltage instabilities in nanoscale NAND flash memories: Sensitivity to the array background pattern., , , , , , and . ESSDERC, page 54-57. IEEE, (2014)Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions., , , , , , and . IOLTS, page 146-151. IEEE Computer Society, (2007)Impact of total dose on heavy-ion upsets in floating gate arrays., , , , , and . Microelectron. Reliab., 50 (9-11): 1837-1841 (2010)