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Density functional theory studies on microscopic processes of GaAs growth, , and . Progr.~Surf.~Sci., (1998)Model for nucleation in GaAs homoepitaxy derived from first principles, , and . Phys.~Rev.~B, (1999)The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate, , and . Proc. 23rd Int. Conf. Phys. Semicond., Berlin 1996, 2, page 1301--1304. Singapore, World Scientific, (1996)Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots, , , , , and . Phys.~Rev.~B, (2003)Trends of the surface relaxations, surface energies, and work functions of the 4<i>d</i> transition metals, , and . Phys. Rev. B, 46 (8): 4816--4829 (August 1992)Identification of surface anion antisite defects in (110) surfaces of III?V semiconductors, , , , , , , and . Applied Physics Letters, (xx xx 2001)10.1063/1.1408906.The adsorption of oxygen at GaN surfaces, , and . Appl.~Phys.~Lett., 74 (12): 1695--1697 (1999)Density-functional theory of surface diffusion and epitaxial growth of metals, , and . page 83. Plenum Press, New York, (1997)Density-Functional Theory of epitaxial growth of metals, , and . The Chemical Physics of Solid Surfaces, 8, page 490. Amsterdam, Elsevier, (1997)First-principles studies of kinetics in epitaxial growth of III-V semiconductors, , and . Appl.~Phys.~A, (2002)