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Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions., , , , , , , , , and 2 other author(s). ESSDERC, page 255-258. IEEE, (2021)Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study., , , , , , , , , and 2 other author(s). ESSCIRC, page 143-146. IEEE, (2021)Physically-based extraction methodology for accurate MOSFET degradation assessment., , , , , , and . Microelectron. Reliab., 55 (9-10): 1417-1421 (2015)Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices., , , , , , , , , and 5 other author(s). ESSDERC, page 144-147. IEEE, (2017)Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory., , , , , , and . Microelectron. Reliab., (2017)Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology., , , , , and . Microelectron. Reliab., (2017)Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited)., , , , , , , , , and 4 other author(s). IRPS, page 1-8. IEEE, (2023)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2021)Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements., , , , , , , , , and . ESSCIRC, page 125-128. IEEE, (2022)Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes., , , , , , , , , and . IMW, page 1-4. IEEE, (2023)