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Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology., , , , , , , and . ESSCIRC, page 356-359. IEEE, (2007)A Low Phase Noise, Wide Tuning Range 20GHz Magnetic-Coupled Hartley-VCO in a 28nm CMOS Technology., , , , , , and . RWS, page 1-3. IEEE, (2019)2-GHz/2-mW and 12-GHz/30-mW dual-modulus prescalers in silicon bipolar technology., , , , , and . IEEE J. Solid State Circuits, 36 (9): 1420-1423 (2001)A 19.5 dBm Power Amplifier with Highly Accurate 8-bit Power Controlling for Automotive Radar Applications in a 28 nm CMOS Technology., , , , , , , and . BCICTS, page 1-4. IEEE, (2019)Personal communications transceiver architectures for monolithic integration., , , , , , , , and . PIMRC, page 363-368. (1994)A 122-GHz SiGe-Based Signal-Generation Chip Employing a Fundamental-Wave Oscillator With Capacitive Feedback Frequency-Enhancement., , and . IEEE J. Solid State Circuits, 46 (9): 2009-2020 (2011)Low Power Wideband Receiver and Transmitter Chipset for mm-Wave Imaging in SiGe Bipolar Technology., , , , , , , , , and 2 other author(s). IEEE J. Solid State Circuits, 47 (5): 1175-1184 (2012)An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology., , , , , , , and . IEEE J. Solid State Circuits, 42 (10): 2099-2106 (2007)Low-noise ESD-protected 24 GHz receiver for radar applications in SiGe: C technology., , , , , and . ESSCIRC, page 308-311. IEEE, (2009)40-Gb/s 2: 1 multiplexer and 1: 2 demultiplexer in 120-nm standard CMOS., , , , and . IEEE J. Solid State Circuits, 38 (11): 1830-1837 (2003)