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Electrical and optical properties of self-assembled InAs quantum dots in InP studied by space-charge spectroscopy and photoluminescence

, , , , , and . Phys.~Rev.~B, (2000)

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Study of the two-dimensional-three-dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum-size structures, , , , , and . Appl.~Phys.~Lett., (1994)Stranski-Krastanow dot.Stacking InAs islands and GaAs layers: Strongly modulated one-dimensional electronic systems, , , , , , and . J.~Appl.~Phys., 80 (6): 3360--3364 (1996)Single-electron transitors in heterostructure nanowires, , , , , , and . Appl.~Phys.~Lett., (2003)Designed emitter states in resonant tunneling through quantum dots, , , , , , , and . Appl.~Phys.~Lett., (2002)Case study of an InAs quantum dot memory: Optical storing and deletion of charge, , , , and . Appl.~Phys.~Lett., (2001)Electronic structure of self-assembled InAs quantum dots in InP: An anisotropic quantum-dot system, , , , , , and . Phys.~Rev.~B, (1999)Evolutionary Games and Equilibrium Selection. MIT Press, Cambridge, MA, (1997)High peak to valley ratios observed in InAs/InP resonant tunneling quantum dot stacks, , , , , , and . Appl.~Phys.~Lett., (2001)Lateral confinement in a resonant tunneling transistor with a buried metallic gate, , , , , , , and . Appl.~Phys.~Lett., (1999)Electrical charaterisation of InP/GaInP quantum dots by space charge spectroscopy, , , , and . J.~Appl.~Phys., (1998)