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Early system failure prediction by using aging in situ monitors: Methodology of implementation and application results.

, , , , and . VTS, page 1. IEEE Computer Society, (2016)

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Digital circuits reliability with in-situ monitors in 28nm fully depleted SOI., , , , , , , and . DATE, page 441-446. ACM, (2015)Workload dependent reliability timing analysis flow., , , , , , and . DATE, page 736-737. IEEE, (2017)In-situ slack monitors: taking up the challenge of on-die monitoring of variability and reliability., , , , and . IVSW, page 1-5. IEEE, (2016)Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes., , , , and . Microelectron. Reliab., (2016)A 0.021mm2 PVT-Aware Digital-Flow-Compatible Adaptive Back-Biasing Regulator with Scalable Drivers Achieving 450% Frequency Boosting and 30% Power Reduction in 22nm FDSOI Technology., , , , , , , , , and 3 other author(s). ISSCC, page 492-494. IEEE, (2021)Study of workload impact on BTI HCI induced aging of digital circuits., , , , and . DATE, page 1020-1021. IEEE, (2016)Cognitive approach to support dynamic aging compensation., , , , , , , , and . ITC, page 1-7. IEEE, (2017)Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes., , , , , , , , and . IOLTS, page 43-46. IEEE, (2016)Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment., , , , , , , and . IRPS, page 5. IEEE, (2015)New insights into the change of voltage acceleration and temperature activation of oxide breakdown., , , , and . Microelectron. Reliab., 43 (8): 1211-1214 (2003)