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Demonstration of Recovery Annealing on 7-Bits per Cell 3D Flash Memory at Cryogenic Operation for Bit Cost Scalability and Sustainability.

, , , , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)

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Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements., , , , , , , , , and . VLSI Technology and Circuits, page 340-342. IEEE, (2022)Demonstration of Recovery Annealing on 7-Bits per Cell 3D Flash Memory at Cryogenic Operation for Bit Cost Scalability and Sustainability., , , , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V., , , , , and . IRPS, page 1-7. IEEE, (2023)Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface., , , , , , , , , and 1 other author(s). Microelectron. Reliab., (2017)New Insights into the Imprint Effect in FE-HfO2 and its Recovery., , , , , , , , , and 3 other author(s). IRPS, page 1-7. IEEE, (2019)Toward 7 Bits per Cell: Synergistic Improvement of 3D Flash Memory by Combination of Single-crystal Channel and Cryogenic Operation., , , , , , , , and . IMW, page 1-4. IEEE, (2022)Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery., , , , , , , , , and 7 other author(s). IRPS, page 1-6. IEEE, (2022)Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation., , , , , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 64-II (4): 462-466 (2017)Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics., , , , , , , , , and 1 other author(s). IRPS, page 1-5. IEEE, (2023)Future route presentation to autonomous mobile wheelchair passengers using the movement of vibrotactile stimuli., , , and . SICE, page 749-754. IEEE, (2022)