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On-Chip Threshold Compensated Voltage Doubler for RF Energy Harvesting.

, , and . VDAT, volume 1066 of Communications in Computer and Information Science, page 180-189. Springer, (2019)

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Analysis of the Energy Quantization Effects on Single Electron Inverter Performance through Noise Margin Modeling., and . VLSI Design, page 493-498. IEEE Computer Society, (2009)An Efficient Design Approach for Implementation of 2 Bit Ternary Flash ADC Using Optimized Complementary TFET Devices., , , , , and . VLSID, page 401-406. IEEE, (2019)Novel Low and High Threshold TFET Based NTI and PTI Cells Benchmarked with Standard 45 nm CMOS Technology for Ternary Logic Applications., , , , , and . VLSID, page 419-424. IEEE, (2019)On-Chip Threshold Compensated Voltage Doubler for RF Energy Harvesting., , and . VDAT, volume 1066 of Communications in Computer and Information Science, page 180-189. Springer, (2019)Impact of energy quantisation in single electron transistor island on hybrid complementary metal oxide semiconductor- single electron transistor integrated circuits., and . IET Circuits Devices Syst., 4 (5): 449-457 (2010)An innovative ultra-low voltage GOTFET based regenerative-latch Schmitt trigger., , , and . Microelectron. J., (2020)Novel gate-overlap tunnel FET based innovative ultra-low-power ternary flash ADC., , , , and . Integr., (2020)Double-gate line-tunneling field-effect transistor devices for superior analog performance., , , and . Int. J. Circuit Theory Appl., 49 (7): 2094-2111 (2021)