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Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodes.

, , , , , , and . Int. J. Circuit Theory Appl., 28 (6): 537-552 (2000)

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Experimental threshold logic implementations based on resonant tunnelling diodes., , , , , , , and . ICECS, page 669-672. IEEE, (2002)Threshold logic circuit design of parallel adders using resonant tunneling devices., , , , , , , and . IEEE Trans. Very Large Scale Integr. Syst., 8 (5): 558-572 (2000)Asynchronous Circuit Design Based on the RTBT Monostable-Bistable Logic Transition Element (MOBILE)., , , , , , , and . SBCCI, page 365-372. IEEE Computer Society, (2002)Tunnelling Diode Technology., , , , , , , and . ISMVL, page 49-60. IEEE Computer Society, (2001)Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodes., , , , , , and . Int. J. Circuit Theory Appl., 28 (6): 537-552 (2000)Circuit and application aspects of tunnelling devices in a MOBILE configuration., , , , , , , and . Int. J. Circuit Theory Appl., 31 (1): 83-103 (2003)Resonant Tunneling Transistors for Threshold Logic Circuit Applications., , , , , and . Great Lakes Symposium on VLSI, page 344-345. IEEE Computer Society, (1999)InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification., , , , , , and . IEICE Trans. Electron., 93-C (8): 1309-1314 (2010)27-GHz bandwidth high-speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET traveling wave amplifier., , , , , , , , , and 4 other author(s). IEEE J. Solid State Circuits, 32 (9): 1394-1401 (1997)InP-based logic gates for low power monolithic optoelectronic circuits InGaAs/InAlAs/InP., , , , , , , , , and . ICECS, page 393-396. IEEE, (1998)