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A 28 nm High-k/MG Heterogeneous Multi-Core Mobile Application Processor With 2 GHz Cores and Low-Power 1 GHz Cores.

, , , , , , , , , , , , and . IEEE J. Solid State Circuits, 50 (1): 92-101 (2015)

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A 28 nm High-k/MG Heterogeneous Multi-Core Mobile Application Processor With 2 GHz Cores and Low-Power 1 GHz Cores., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 50 (1): 92-101 (2015)Study of impact of BTI's local layout effect including recovery effect on various standard-cells in 10nm FinFET., , , , , and . IRPS, page 1. IEEE, (2018)10.2 A 28nm HPM heterogeneous multi-core mobile application processor with 2GHz cores and low-power 1GHz cores., , , , , , , , , and 4 other author(s). ISSCC, page 178-179. IEEE, (2014)Assessment of reliability impact on GHz processors with moderate overdrive., , , , and . ISQED, page 456-460. IEEE, (2014)Study of Local BTI Variation and its Impact on Logic Circuit and SRAM in 7 nm Fin-FET Process., , , , , and . IRPS, page 1-6. IEEE, (2019)An on-die digital aging monitor against HCI and xBTI in 16 nm Fin-FET bulk CMOS technology., , , , , and . ESSCIRC, page 112-115. IEEE, (2015)A Fully Standard-Cell Based On-Chip BTI and HCI Monitor with 6.2x BTI sensitivity and 3.6x HCI sensitivity at 7 nm Fin-FET Process., , , , , and . A-SSCC, page 195-196. IEEE, (2018)28-nm HKMG GHz digital sensor for detecting dynamic voltage drops in testing for peak power optimization., , , , and . CICC, page 1-4. IEEE, (2012)NBTI/PBTI separated BTI monitor with 4.2x sensitivity by standard cell based unbalanced ring oscillator., , , , and . A-SSCC, page 201-204. IEEE, (2017)An Analysis of Local BTI Variation with Ring-Oscillator in Advanced Processes and Its Impact on Logic Circuit and SRAM., , , , , , and . IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 104-A (11): 1536-1545 (2021)