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Investigation of gate material ductility enables flexible a-IGZO TFTs bendable to a radius of 1.7 mm., , , , , , и . ESSDERC, стр. 362-365. IEEE, (2013)Unobtrusive Thin-Film Devices and Sustainable Green Electronics, , , и . 2023 IEEE International Flexible Electronics Technology Conference (IFETC), стр. 1-3. IEEE, (августа 2023)AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact, , , , , , , , , и . IEEE Transactions on Electron Devices, 70 (12): 6359-6363 (декабря 2023)Influence of Semiconductor Island Geometry on the AC Performance of Flexible InGaZnO TFTs, , , , , и . IEEE Electron Device Letters, 44 (5): 773-776 (мая 2023)Influence of semiconductor island geometry on the AC performance of flexible InGaZnO TFTs, , , , , и . IEEE Electron Device Letters, (2023)Locally Reinforced Polymer-Based Composites for Elastic Electronics, , , , , , , и . ACS Applied Materials & Interfaces, 4 (6): 2860--2864 (июня 2012)Influence of Flexible Substrate Materials on the Performance of Polymer Composite Gas Sensors, , , и . 14th International Meeting on Chemical Sensors - IMCS 2012, стр. 537-540. AMA Service GmbH, Von-Münchhausen-Str. 49, 31515 Wunstorf, Germany, (2012)Flexible double gate a-IGZO TFT fabricated on free standing polyimide foil, , , , , и . Solid-State Electronics, (2013)Selected Papers from the ESSDERC 2012 Conference.Fabricating and Assembling Acoustic Metamaterials and Phononic Crystals, , , и . Advanced Engineering Materials, 23 (2): 2000988 (ноября 2020)Gain-Tunable Complementary Common-Source Amplifier Based on a Flexible Hybrid Thin-Film Transistor Technology, , , , , , , , , и 2 other автор(ы). IEEE Electron Device Letters, 38 (11): 1536-1539 (ноября 2017)