( en | de | ru )

 

Disambiguation of "Veksler, Dmitry"

Author of the publication

copydeleteadd this publication to your clipboard
Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions.

, , , , , , , , , , and . IRPS, page 1-4. IEEE, (2020)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Dmitry Sveshnikov

Dmitry Suslov

Dmitry Varentsov

Dmitry Chigrin

Dmitry Ivanov

 

Other publications of authors with the same name

Signal duration sensitive degradation in scaled devices., , and . IRPS, page 1-5. IEEE, (2023)Mitigating switching variability in carbon nanotube memristors., , , , , , , , , and 3 other author(s). IRPS, page 1-4. IEEE, (2021)Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices., , , , , , , , and . DRC, page 1-2. IEEE, (2022)Switching Variability Factors in Compliance-Free Metal Oxide RRAM., , , , , and . IRPS, page 1-5. IEEE, (2019)Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics., , , , , , , , , and 2 other author(s). IRPS, page 36-1. IEEE, (2022)Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions., , , , , , , , , and 1 other author(s). IRPS, page 1-4. IEEE, (2020)Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs., , , , , and . IRPS, page 2. IEEE, (2015)In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory., , , , , , , , , and 8 other author(s). CoRR, (2015)