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High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells., , , , , , , , , and . Microelectron. J., 34 (5-8): 491-493 (2003)Lasing in structures with InAs quantum dots in an (Al,Ga)As matrix grown by submonolayer deposition, , , , , , , , , and 8 other author(s). J.~Electron.~Mat., (1999)High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells, , , , , , , , , and 9 other author(s). Proc. 10th International Symposium on Nanostructures: Physic and Technology, St. Petersburg, Ioffe Institut, (2002)Optical properties of InAs quantum dots in a Si matrix, , , , , , , , , and 3 other author(s). Appl. Phys. Lett., 74 (12): 1701--1703 (1999)Complete suppression of filamentation and superior beam quality in quantum-dot lasers, , , , , , , , , and . Applied Physics Letters, 82 (6): 952--954 (2003)Response to ``Comment on `Ground state exciton lasing in CdSesubmonolayers inserted in a ZnSe matrix' '' Appl. Phys.Lett. 70, 2765 (1997), , , , , , , , and . Appl.~Phys.~Lett., (1997)Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix, , , , , , , , , and 4 other author(s). Appl.~Phys.~Lett., (1998)Electron escape from self-assembled InAs/GaAs quantum dot stacks, , , , , , , , , and 2 other author(s). Physica~B, (1998)Nanofaceting and alloy decomposition: From basic studies to advanced photonic devices., , , , , , , and . Microelectron. J., 37 (12): 1451-1460 (2006)Low threshold injection lasers based on vertically coupled quantum dots, , , , , , , , , and 8 other author(s). J. Crystal Growth, 175 (2): 689--695 (1997)