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SCR operation mode of diode strings for ESD protection., , , , , , and . Microelectron. Reliab., 47 (7): 1044-1053 (2007)Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies., , , , , , and . Microelectron. Reliab., 43 (7): 1001-1010 (2003)RF ESD protection strategies: Codesign vs. low-C protection., , , , , , , , and . Microelectron. Reliab., 47 (7): 1008-1015 (2007)Cascading Techniques for a High-Speed Memory Interface., , , , , , , , , and . ISSCC, page 234-599. IEEE, (2007)Transient latch-up: experimental analysis and device simulation., , , , , , , and . Microelectron. Reliab., 45 (2): 297-304 (2005)Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development., , , , , , , , and . Microelectron. Reliab., 42 (9-11): 1267-1274 (2002)ESD-protected CMOS 3-5 GHz wideband LNA+PGA design for UWB., , , , , and . ESSCIRC, page 219-222. IEEE, (2005)High abstraction level permutational ESD concept analysis., , , , , , , and . Microelectron. Reliab., 45 (2): 313-321 (2005)A 10GHz Broadband Amplifier with Bootstrapped 2kV ESD Protection., , , , , and . ISSCC, page 550-551. IEEE, (2007)