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Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current.

, , , , , , and . ESSDERC, page 262-265. IEEE, (2015)

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Selectors for high density crosspoint memory arrays: Design considerations, device implementations and some challenges ahead., , and . ICICDT, page 1-4. IEEE, (2015)Measurement and Analysis of Parasitic Capacitance in FinFETs with High-k Dielectrics and Metal-Gate Stack., , , , and . VLSI Design, page 253-258. IEEE Computer Society, (2009)Optimization of the write algorithm at low-current (10μA) in Cu/Al2O3-based conductive-bridge RAM., , , , , and . ESSDERC, page 114-117. IEEE, (2015)The Potential of FinFETs for Analog and RF Circuit Applications., , , , , , , , , and 5 other author(s). IEEE Trans. Circuits Syst. I Regul. Pap., 54-I (11): 2541-2551 (2007)Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies., , , , , , , , , and 5 other author(s). ISSCC, page 528-529. IEEE, (2008)Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current., , , , , , and . ESSDERC, page 262-265. IEEE, (2015)Analysis of the effect of cell parameters on the maximum RRAM array size considering both read and write., , , , and . ESSDERC, page 282-285. IEEE, (2012)High-k Dielectrics and Metal Gates for Future Generation Memory Devices, , , , , , , , , and 28 other author(s). ECS Transactions, 19 (1): 29--40 (2009)Conductive filaments multiplicity as a variability factor in CBRAM., , , , , , and . IRPS, page 11. IEEE, (2015)