Author of the publication

Detection and analysis of stress-induced voiding in Al-power lines by acoustic GHz-microscopy.

, , , , , and . Microelectron. Reliab., (2016)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling., , , , , , , , , and 1 other author(s). IRPS, page 1-10. IEEE, (2020)Thermal source separation for 3D defect localization using independent component analysis (ICA) from time-resolved temperature response (TRTR)., , , , , and . CASE, page 395-400. IEEE, (2021)New Access to Soft Breakdown Parameters of Low-k Dielectrics Through Localisation-Based Analysis., , , , , , , , , and 1 other author(s). IRPS, page 1-9. IEEE, (2019)Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures., , , and . Microelectron. Reliab., 54 (9-10): 1785-1789 (2014)High resolution physical analysis of ohmic contact formation at GaN-HEMT devices., , , , , , , , , and . Microelectron. Reliab., (2017)Reliability evaluation of Si-dies due to assembly issues., , , and . Microelectron. Reliab., (2016)Detection and analysis of stress-induced voiding in Al-power lines by acoustic GHz-microscopy., , , , , and . Microelectron. Reliab., (2016)Lock-in thermal IR imaging using a solid immersion lens., , , , and . Microelectron. Reliab., 46 (9-11): 1508-1513 (2006)Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures., , , , , , and . Microelectron. Reliab., (2016)Exploring the thermal limit of GaN power devices under extreme overload conditions., , , , , , , and . Microelectron. Reliab., (2017)