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TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime., , , , , , и . ESSDERC, стр. 325-328. IEEE, (2014)Gate stack optimization to minimize power consumption in super-lattice fets., , , , и . ESSDERC, стр. 81-84. IEEE, (2013)3D TCAD modeling of NO2CNT FET sensors., , , , , , и . ESSDERC, стр. 222-225. IEEE, (2018)DC and small-signal numerical simulation of graphene base transistor for terahertz operation., , , , , и . ESSDERC, стр. 314-317. IEEE, (2013)Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty., , , , и . ESSDERC, стр. 73-76. IEEE, (2013)A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs., , , , и . ESSDERC, стр. 262-265. IEEE, (2014)Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs., , , и . Microelectron. J., 44 (1): 20-25 (2013)TCAD study of DLC coatings for large-area high-power diodes., , , , , , , и . Microelectron. Reliab., (2018)Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation., , , , , и . ESSDERC, стр. 313-316. IEEE, (2014)Drain-conductance optimization in nanowire TFETs., , , и . ESSDERC, стр. 105-108. IEEE, (2012)