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Disambiguation of "Gnani, Elena"

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TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime.

, , , , , , and . ESSDERC, page 325-328. IEEE, (2014)

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Claudia Ines Elena de Theissen

Adrien Elena

Claudia Ines Elena Theissen

Anaxagoras Elenas

Claudia Ines Elena Theissen

 

Other publications of authors with the same name

3D TCAD modeling of NO2CNT FET sensors., , , , , , and . ESSDERC, page 222-225. IEEE, (2018)A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs., , , , and . ESSDERC, page 262-265. IEEE, (2014)DC and small-signal numerical simulation of graphene base transistor for terahertz operation., , , , , and . ESSDERC, page 314-317. IEEE, (2013)Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty., , , , and . ESSDERC, page 73-76. IEEE, (2013)TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE., , , and . IEEE Access, (2023)TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime., , , , , , and . ESSDERC, page 325-328. IEEE, (2014)Calculation of Transport Parameters of SiO2 Polymorphs., , , and . VLSI Design, 13 (1-4): 311-315 (2001)Gate stack optimization to minimize power consumption in super-lattice fets., , , , and . ESSDERC, page 81-84. IEEE, (2013)Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation., , , , , and . ESSDERC, page 313-316. IEEE, (2014)Drain-conductance optimization in nanowire TFETs., , , and . ESSDERC, page 105-108. IEEE, (2012)